| 摘要 |
Initially, an Yb2O3 raw material was subjected to uniaxial pressure forming at a pressure of 200 kgf/cm2, so that a disc-shaped compact having a diameter of about 35 mm and a thickness of about 10 mm was produced, and was stored into a graphite mold for firing. Subsequently, firing was performed by using a hot-press method at a predetermined firing temperature (1,500° C.), so as to obtain a corrosion-resistant member for semiconductor manufacturing apparatus. The press pressure during firing was specified to be 200 kgf/cm2 and an Ar atmosphere was kept until the firing was finished. The retention time at the firing temperature (maximum temperature) was specified to be 4 hours. In this manner, the corrosion-resistant member for semiconductor manufacturing apparatus made from an Yb2O3 sintered body having an open porosity of 0.2% was obtained. |
