发明名称 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 <p>Technology of the present invention comprises a substrate which includes a cell array region and an alignment key region; cell laminates which is formed on the cell array region of the substrate and includes a conductive pattern and an interlayer insulating film laminated alternately; and an alignment key laminate which is formed on the alignment key region of the substrate to be lower than the cell laminates and includes the conductive pattern and the interlayer insulating film laminated alternately.</p>
申请公布号 KR20140063145(A) 申请公布日期 2014.05.27
申请号 KR20120130161 申请日期 2012.11.16
申请人 SK HYNIX INC. 发明人 JUNG, MI RIM
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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