| 摘要 |
An exposure apparatus (10) for transferring a mask pattern (12A) from a mask (12) to first and second substrates (14A) (14B) includes an illumination system (18) that generates and simultaneously directs a first beam (32A) at the mask pattern (12A) and a second beam (32B) at the mask pattern (12A). Further, the first beam (32A) is spaced apart from the second beam (32B) at the mask pattern (12A). As provided herein, the first beam (32A) directed at the mask (12) creates a first pattern beam (34A) that is transferred to a first substrate location (33A), and the second beam (32B) directed at the mask (12) creates a second pattern beam (34B) that is transferred to a second substrate location (33B). Moreover, the first substrate location (33A) is spaced apart from the second substrate location (33B). With this design, the first pattern beam (34A) can be transferred to the first substrate (14A) and the second pattern beam (34B) can be simultaneously transferred to the second substrate (14B). As a result thereof, the same mask (12) can be used to simultaneously transfer features to two wafers (14A) (14B) to approximately double the throughput capabilities of the exposure apparatus (10). |
