| 摘要 |
<p>Disclosed are a phase change memory cell array and a method of manufacturing the same. The phase change memory cell array includes a first carbon nanotube array which is arranged on an insulator substrate in a first direction and includes a phase change material deposited by a self-alignment method, and a second carbon nanotube array which intersects with the first carbon nanotube array and is arranged in a second direction.</p> |
