| 摘要 |
FIELD: measurement equipment.SUBSTANCE: invention relates to control and measurement equipment. The method to determine electroconductivity and thickness of a semiconductor layer includes radiation of a layer with electromagnetic radiation of microwave range, measurement of frequency dependence of coefficient of reflection of electromagnet radiation of microwave range, according to the solution, they use a unidimensional waveguide microwave photon crystal, where they create disturbance to periodicity in the form of a varied thickness of the central air layer. Previously they place the measured semiconductor layer inside the central layer at the specified distance from its border, additionally they measure frequency dependence of the coefficient of passage of electromagnetic radiation of microwave range, then they place the measured semiconductor layer inside the central layer at a new distance from its border or vary thickness of the central layer, they measure frequency dependences of the coefficient of reflection and passage of electromagnetic radiation of microwave range, interacting with a photon crystal, at new position of the investigated semiconductor structure or at new value of thickness of the central layer, they calculate, using a computer, values of thickness and electroconductivity, at which theoretical frequency dependences of coefficients of reflection and passage of electromagnetic radiation produced at two distances from the border of the central layer to the investigated semiconductor structure or at two values of thickness of the central layer, most close to measured in these positions from solving a system of equations.EFFECT: expansion of functional capabilities of simultaneous detection of electroconductivity and thickness of semiconductor plates and electroconductivity and thickness of thin semiconductor epitaxial layers in structures "semiconductor layer - semiconductor substrate".8 dwg |
