发明名称 Negative charge pump
摘要 A charge pump includes a first node configured to receive a first voltage and a second node coupled to the first node through a first transistor. The second node is configured to output a voltage having a greater voltage magnitude than the first voltage. A first capacitor is coupled to a third node, and a fourth node is configured to receive a first clock signal. The third node is disposed between a drain of the first transistor and the fourth node. A leaky circuit device is coupled in parallel with the first capacitor for draining charges of a first polarity away from the second node.
申请公布号 US8736351(B2) 申请公布日期 2014.05.27
申请号 US201113005643 申请日期 2011.01.13
申请人 YANG TIEN-CHUN;LIN YVONNE;HUANG MING-CHIEH;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 YANG TIEN-CHUN;LIN YVONNE;HUANG MING-CHIEH
分类号 G05F1/10;G05F3/02 主分类号 G05F1/10
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