A charge pump includes a first node configured to receive a first voltage and a second node coupled to the first node through a first transistor. The second node is configured to output a voltage having a greater voltage magnitude than the first voltage. A first capacitor is coupled to a third node, and a fourth node is configured to receive a first clock signal. The third node is disposed between a drain of the first transistor and the fourth node. A leaky circuit device is coupled in parallel with the first capacitor for draining charges of a first polarity away from the second node.
申请公布号
US8736351(B2)
申请公布日期
2014.05.27
申请号
US201113005643
申请日期
2011.01.13
申请人
YANG TIEN-CHUN;LIN YVONNE;HUANG MING-CHIEH;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.