发明名称 Semiconductor laser
摘要 A semiconductor laser includes a gain region; a distributed Bragg reflector (DBR) region including a diffraction grating; an end facet facing the DBR region with the gain region arranged therebetween; a first ring resonator including a first ring-like waveguide and a first optical coupler; a second ring resonator including a second ring-like waveguide and a second optical coupler; and an optical waveguide that is optically coupled to the end facet and extending in a predetermined optical-axis direction. The first and second ring resonators are optically coupled to the optical waveguide through the first and second optical couplers, respectively. Also, the DBR region, the gain region, and the end facet constitute a laser cavity. Further, the first ring resonator has a free spectral range different from a free spectral range of the second ring resonator.
申请公布号 US8737446(B2) 申请公布日期 2014.05.27
申请号 US201113046866 申请日期 2011.03.14
申请人 FUKUDA CHIE;SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 FUKUDA CHIE
分类号 H01S5/00 主分类号 H01S5/00
代理机构 代理人
主权项
地址