| 发明名称 |
Gate tunable tunnel diode |
| 摘要 |
A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric. |
| 申请公布号 |
US8735271(B2) |
申请公布日期 |
2014.05.27 |
| 申请号 |
US201213594037 |
申请日期 |
2012.08.24 |
| 申请人 |
AFZALI-ARDAKANI ALI;FARMER DAMON;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AFZALI-ARDAKANI ALI;FARMER DAMON |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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