| 摘要 |
FIELD: electricity.SUBSTANCE: bipolar SHF transistor based on heteroepitaxial structures includes on a substrate of single-crystalline silicon of p-type conductivity an in-series buffer layer of AlN, a layer of polycrystalline diamond with thickness of at least 0.1 mcm, an undoped buffer layer of GaN, a subcollector layer of GaN of n+type conductivity, a collector of GaN of n-type conductivity, a base of solid solution AlGaN, an intermediate layer of AlGaN of p+type conductivity, an emitter including AlGaN of n-type conductivity, contact layers, ohmic conductors and layers of insulating dielectric coating of polycrystalline diamond. Besides, formulas of the layers of AlGaN and AlGaN are different, with unequal concentration of a doping agent.EFFECT: invention allows increase in the output SHF power, decrease in the emitter capacitance, resistance of base, capacitance of the collector-base, edge states of heterojunctions and allows high values of the emitter efficiency, limit frequency thus providing effective heat removal from the transistor active area.2 cl, 1 dwg |
