发明名称 |
Shifting cell voltage based on grouping of solid-state, non-volatile memory cells |
摘要 |
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells. Based on cell counts within the groups, it can be determined that a shift in a reference voltage will reduce a collective bit error rate of the cells. The shift can be applied to data access operations affecting the cells. |
申请公布号 |
US8737133(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201113275675 |
申请日期 |
2011.10.18 |
申请人 |
SRIDHARAN ARVIND;PATAPOUTIAN ARA;SEAGATE TECHNOLOGY LLC |
发明人 |
SRIDHARAN ARVIND;PATAPOUTIAN ARA |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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