发明名称 |
CMOS gate stack structures and processes |
摘要 |
A semiconductor device includes a substrate having a semiconducting surface having formed therein a first active region and a second active region, where the first active region consists of a substantially undoped layer at the surface and a highly doped screening layer of a first conductivity type beneath the first substantially undoped layer, and the second active region consists of a second substantially undoped layer at the surface and a second highly doped screening layer of a second conductivity type beneath the second substantially undoped layer. The semiconductor device also includes a gate stack formed in each of the first active region and the second active region consists of at least one gate dielectric layer and a layer of a metal, where the metal has a workfunction that is substantially midgap with respect to the semiconducting surface. |
申请公布号 |
US8735987(B1) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213489824 |
申请日期 |
2012.06.06 |
申请人 |
HOFFMANN THOMAS;THOMPSON SCOTT E.;RANADE PUSHKAR;SUVOLTA, INC. |
发明人 |
HOFFMANN THOMAS;THOMPSON SCOTT E.;RANADE PUSHKAR |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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