SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING REFRESH LEVERAGING THEREOF

摘要

Disclosed is an improved refresh leveraging driving method in a volatile semiconductor memory like DRAM. The refresh leveraging driving method includes the step of determining word lines to be driven in a refresh leveraging operation with the same unit as a redundancy repair row unit. Also, the driving method includes the steps of: not caring a lower row address in the applied refresh leveraging address by corresponding to the determined refresh leveraging row driving unit; and driving the word lines according to the combined refresh leveraging address by internally generating the lower row address which is not cared in the refresh leveraging address.