发明名称 ETCHANT COMPOSITION FOR AG THIN LAYER AND METHOD FOR FABRICATING METAL PATTERN USING THE SAME
摘要 The present invention relates to an etchant composition of multiple layers composed of a single layer of Ag or Ag alloy or the single layer and an indium oxide layer. The etchant composition of the multiple layers contains nitric acid, sulfuric acid, persulfate, organic acid salts, and water and does not contain phosphoric acid. The etchant composition contains nitric acid of 5.0-8.0 wt%, sulfuric acid of 5.0-8.0 wt%, persulfate of 1.0-5.0 wt%, organic acid salt of 0.5-3.0 wt%, and water of 76.0-88.5 wt%.
申请公布号 KR20140063283(A) 申请公布日期 2014.05.27
申请号 KR20120130462 申请日期 2012.11.16
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 JANG, SANG HOON;SHIM, KYUNG BO;LEE, SUCK JUN
分类号 C23F1/30;H05K3/06 主分类号 C23F1/30
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