发明名称 |
Drift-insensitive or invariant material for phase change memory |
摘要 |
A method of storing a bit at a memory device is disclosed. A memory cell the memory device is formed of a germanium-deficient chalcogenide glass configured to alternate between an amorphous phase and a crystalline phase upon application of a selected voltage, wherein a drift coefficient of the germanium-deficient chalcogenide glass is less than a drift coefficient of an undoped chalcogenide glass. A voltage is applied to the formed memory cell to select one of the amorphous phase and the crystalline phase to store the bit. |
申请公布号 |
US8737121(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213478932 |
申请日期 |
2012.05.23 |
申请人 |
LAM CHUNG H.;LI JING;LUAN BINQUAN;MARTYNA GLENN J.;NEWNS DENNIS M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAM CHUNG H.;LI JING;LUAN BINQUAN;MARTYNA GLENN J.;NEWNS DENNIS M. |
分类号 |
G11C13/00;G11C11/16 |
主分类号 |
G11C13/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|