| 摘要 |
The present invention relates to a semiconductor memory device and an operating method thereof. The semiconductor memory device includes a memory string which is connected to a bit line, a page buffer which senses data stored in the memory cell according to the threshold voltage level of the memory cell included in the memory string in a program verifying operation or reading operation, and a sensing control circuit which changes the level of a sensing current supplied to the page buffer from the bit line to sense the data of the memory cell by the program verifying operation or reading operation. |
