发明名称 |
Scavenging metal stack for a high-K gate dielectric |
摘要 |
A semiconductor structure is provided. The structure includes a semiconductor substrate of a semiconductor material and a gate dielectric having a high dielectric constant dielectric layer with a dielectric constant greater than silicon. The gate dielectric is located on the semiconductor substrate. A gate electrode abuts the gate dielectric. The gate electrodes includes a lower metal layer abutting the gate dielectric, a scavenging metal layer abutting the lower metal layer, an upper metal layer abutting the scavenging metal layer, and a silicon layer abutting the upper metal layer. The scavenging metal layer reduces an oxidized layer at an interface between the upper metal layer and the silicon layer responsive to annealing. |
申请公布号 |
US8735996(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213547772 |
申请日期 |
2012.07.12 |
申请人 |
ANDO TAKASHI;KWON UNOH;NARAYANAN VIJAY;SCHAEFFER JAMES K.;INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
ANDO TAKASHI;KWON UNOH;NARAYANAN VIJAY;SCHAEFFER JAMES K. |
分类号 |
H01L29/78;H01L21/8238;H01L29/49;H01L29/51 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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