发明名称 |
Radiation hardened FinFET |
摘要 |
The embodiments of the invention provide a structure and method for a rad-hard FinFET or mesa. More specifically, a semiconductor structure is provided having at least one fin or mesa comprising a channel region on an isolation region. A doped substrate region is also provided below the fin, wherein the doped substrate region has a first polarity opposite a second polarity of the channel region. The isolation region contacts the doped substrate region. The structure further includes a gate electrode covering the channel region and at least a portion of the isolation region. The gate electrode comprises a lower portion below the channel region of the fin, wherein the lower portion of the gate electrode comprises a height that is at least one-half of a thickness of the fin. |
申请公布号 |
US8735990(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US20070679869 |
申请日期 |
2007.02.28 |
申请人 |
ANDERSON BRENT A.;DENNARD ROBERT H.;HAKEY MARK C.;NOWAK EDWARD J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;DENNARD ROBERT H.;HAKEY MARK C.;NOWAK EDWARD J. |
分类号 |
H01L21/70;H01L27/085;H01L29/06 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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