发明名称 |
Semiconductor device having a first spacer element and an adjacent second spacer element |
摘要 |
The present disclosure describes a semiconductor device including a semiconductor substrate and a gate stack disposed on the semiconductor substrate. A first spacer element is disposed on the substrate abutting the first gate stack. In an embodiment, the first spacer element includes silicon nitride. A second spacer element is adjacent the first spacer element. In an embodiment, the second spacer element includes silicon oxide. A raised source and a first raised drain is provided laterally contacting sidewalls of the second spacer element. In an embodiment, a contact directly interfaces with the second spacer element. |
申请公布号 |
US8735988(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201313871230 |
申请日期 |
2013.04.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YUN JING;FAN WEI-HAN;LIN YU-HSIEN;HUANG YIMIN |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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