| 摘要 |
<p>Thermally highly loaded low-E layer system comprises an antireflection upper layer having a partial layer of zinc oxide or mixed oxide (ZnMeO x) containing zinc oxide or a mixed oxide layer sequence of the type: ZnO: Al/ZnOMeO x, a partial layer of silicon nitride (Si 3N 4 or Si xO yN z) and a 0.5-5 nm thick separating layer made from a metal oxide or mixed oxide with a cubic crystal lattice arranged between the partial layers.</p> |
