SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes a first conductive layer; at least one first slit which penetrates the first conductive layer and divides the first conductive layer into memory block units; second conductive layers which are stacked in the upper part of the first conductive layer; and at least one second silt which penetrates the second conductive layers in a position which is different from that of the first slit and divides the second conductive layers into memory block units.