SEMICONDUCTOR DEVICE AND METHOD MANUFACTURING THE SAME

摘要

A semiconductor device according to an embodiment of the present invention comprises: an n-type buffer layer located on a first surface of an n+ type silicon carbide substrate; a first n-type epitaxial layer located on the n-type buffer layer; a second n-type epitaxial layer located on the first n-type epitaxial layer; a first trench and a second trench which are located on the first n-type epitaxial layer and the second n-type epitaxial layer; a p+ region which is extended from the lower part of the first trench to the inside of the sidewall of the first trench; an n+ region located on the second n-type epitaxial layer; a gate insulation film located in the second trench; a gate electrode located on the gate insulation film; an oxide film located on the gate electrode; a source electrode located on the n+ region, the oxide film and the p+ region; and a drain electrode located on a second surface of the n+ type silicon carbide substrate, wherein a doping concentration of the first n-type epitaxial layer is greater than a doping concentration of the second n-type epitaxial layer, the second n-type epitaxial layer is located on each of both sides of the second trench, and a channel is arranged on the second n-type epitaxial layer.