LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHT UNIT

摘要

A light emitting device according to an embodiment of the present invention comprises a first conductive semiconductor layer; a first barrier layer disposed on the first conductive semiconductor layer and including a first GaN layer, a first AlGaN layer disposed on the first GaN layer, or a first AlInGaN layer; an InGaN well layer disposed on the first barrier layer; a second barrier layer disposed on the InGaN well layer; and a second conductive semiconductor layer disposed on the second barrier layer.