| 摘要 |
<p>A lithography method includes a step (12) of obtaining a self-organizing block-copolymer layer (21) on a neuter layer (22″) (The neuter layer (22″) is placed on a substrate (23) and the self-organizing block-copolymer layer (21) includes two or more polymer components (24,25) having different etching resistance and a copolymer pattern structure formed by the micro-phase separation of the polymer components (24,25)), a step (14) of leaving the second polymer component (24) by selectively etching a first polymer of the self-organizing block-copolymer layer (21), and a step of applying a plasma etching (16) to the neuter layer (22″) by using the second polymer component (24) as a mask. (The plasma etching (16) includes inactive gas and H2).</p> |
