CHEMICAL VAPOR DEPOSITION APPARATUS

摘要

A chemical vapor deposition apparatus according to an embodiment of the present invention comprises a chamber body having a hollow type space therein; a susceptor formed inside the chamber body and having at least one pocket with a substrate placed thereon; a heating unit arranged on the lower part of the susceptor and heating the substrate; a chamber cover arranged on the upper part of the chamber body, having a storage chamber for accommodating reaction gas formed therein and a reaction space formed with a space apart from the susceptor, and supplying the reaction gas to the reaction gas space for the reaction gas to flow along the surface of the susceptor; and a blocking unit having the inner circumferential surface coated with one substance selected from a group composed of SiC, C and Y_2O_3.