METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

摘要

This method for cleaning a semiconductor substrate comprises: a first cleaning operation wherein a polished semiconductor substrate is cleaned using the cleaning agent (A) described below or the cleaning agent (B) described below; and a second cleaning operation wherein the semiconductor substrate is cleaned using the cleaning agent (C) described below after the first cleaning operation. Cleaning agent (A): a liquid cleaning agent that contains a hydrocarbon compound, a glycol ether and a surfactant Cleaning agent (B): a liquid cleaning agent that contains a hydroxide of an alkali metal, one or more substances that are selected from among hydroxycarboxylic acids and salts thereof, and one or more substances that are selected from among 1-hydroxyethane-1,1-diphosphonic acid and salts thereof Cleaning agent (C): a liquid cleaning agent that contains sulfuric acid and hydrogen peroxide and has a sulfuric acid concentration of 50% by mass or more