| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method for manufacturing a semiconductor element covered with a phosphor layer, in which preparation of a plurality kinds of phosphor layers including phosphors with different concentrations is not required even when a plurality of optical semiconductor elements have different main wavelengths each other, and also by which a phosphor layer corresponding to a targeted hue can be easily formed; a semiconductor element covered with a phosphor layer obtained by the method for manufacturing a semiconductor element covered with a phosphor layer; a method for manufacturing a semiconductor device including the semiconductor element covered with a phosphor layer; and a semiconductor device obtained by the method for manufacturing a semiconductor device.SOLUTION: A method for manufacturing an LED device 4 includes steps of: preliminarily mounting an LED 2 on a substrate 3; opposing a phosphor layer 1 containing a phosphor to the LED 2; and adjusting a hue y of light emitted from the LED 2 and output through the phosphor layer 1, by adjusting the thickness T2 of the phosphor layer 1. |
