| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which decreases cost and has a high degree of freedom in layout and included an oscillator; and provide a manufacturing method of the semiconductor device.SOLUTION: A semiconductor device comprises a wiring structure region MCR and an oscillator region OCR. The oscillator region OCR has a metal resistance element Rm as a layer the same with a conductive film TOA on uppermost layer metal wiring of the wiring structure region MCR. By forming a titanium nitride thin film as the resistance element Rm of the oscillator and a titanium nitride thin film as a barrier metal in the same process, shortening of the process and reduction in cost can be achieved. |
