| 摘要 |
<p>A FinFET and method for manufacture thereof, the method of manufacturing the FinFET comprising: forming a through-stopping layer (102) on a semiconductor substrate (101); forming a first semiconductor layer (103) on the through-stopping layer (102); forming a source region and a drain region (106) in the semiconductor layer (103); forming a semiconductor fin from the first semiconductor layer (103), the source region and the drain region (106) contacting the semiconductor fin on the two ends of the semiconductor fin; and forming a gate stacking across the semiconductor fin, the gate stacking including a gate conductor and a gate dielectric (110) interposed between the gate conductor (111) and the semiconductor fin. Through the after fin technology to manufacture the FinFET, the method is in favor of the integration of the high K gate dielectric and the metal gate and the source region and the drain region as the stress source.</p> |
