| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor element which has excellent RF characteristics while showing excellent DC characteristics.SOLUTION: A power semiconductor element 100A includes: a substrate 110; a first semiconductor layer 120 provided on the substrate 110; a second semiconductor layer 130 provided on the first semiconductor layer 120; a third semiconductor layer 150 which is provided on the second semiconductor layer 130 and exposes a part of the second semiconductor layer 130; a gate electrode 163 which is provided on the second semiconductor layer 130 exposed through the third semiconductor layer 150; and a source electrode 161 and a drain electrode 162 which are provided on the third semiconductor layer 150 so as to be separated from each other while sandwiching the gate electrode 163 therebetween. An electrical isolation region 150a is provided on the third semiconductor layer 150 between the gate electrode 163 and the drain electrode 162. |
