| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a light-emitting element manufacturing method and a light-emitting element which can inhibit a memory effect at low cost at the time of Mg incorporation into an active layer.SOLUTION: A manufacturing method of a light-emitting element including an active layer having a nitride semiconductor comprises: a process of forming an In-containing layer on a substrate in a reaction furnace which has a usage history of a material containing Mg atoms; and a process of forming on the In-containing layer, the active layer having the nitride semiconductor. A light-emitting element comprises: a layer which is arranged on a substrate and contains In and Mg; an active layer which is arranged on the layer and composed of a nitride semiconductor; and an Mg-containing p-type semiconductor layer on the active layer.</p> |
