| 摘要 |
One feature pertains to an integrated circuit (IC) that includes a metal gate terminal that has a gate metal that is either p-type or n-type. The IC further includes a first semiconductor region having either a p-type doping or an n-type doping, such that if the gate metal is p-type then the first semiconductor region has the n-type doping, and if the gate metal is n-type then the first semiconductor region has the p-type doping. A gate dielectric is interposed between the metal gate terminal and the first semiconductor region. The gate dielectric has a gate breakdown voltage VBDGSD that is reduced in proportion to a built-in electric field EBIGSD associated with a boundary region between the metal gate terminal and the first semiconductor region if a polarity of a programming voltage VPP is oriented parallel to the built-in electric field EBIGSD. |
