发明名称 |
Semiconductor Integrated Device with Channel Region |
摘要 |
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes receiving a semiconductor device precursor. The semiconductor device precursor includes a substrate, source/drain regions on the substrate, dummy gate stacks separating the source/drain regions on the substrate and a doped region under the dummy gate stacks. The dummy gate stack is removed to form a gate trench. The doped region in the gate trench is recessed to form a channel trench. A channel layer is deposited in the channel trench to form a channel region and then a high-k (HK) dielectric layer and a metal gate (MG) are deposited on the channel region. |
申请公布号 |
US2014138763(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201213678977 |
申请日期 |
2012.11.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG KAI-CHIEH;WU WEI-HAO;HSIEH WEN-HSING;WU ZHIQIANG |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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