发明名称 |
Optoelectronic Semiconductor Body and Method for Producing an Optoelectronic Semiconductor Body |
摘要 |
An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas. |
申请公布号 |
US2014138703(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201214126047 |
申请日期 |
2012.05.15 |
申请人 |
AVRAMESCU ADRIAN STEFAN;PIETZONKA INES;DINI DIMITRI;OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
AVRAMESCU ADRIAN STEFAN;PIETZONKA INES;DINI DIMITRI |
分类号 |
H01S5/22;H01L21/02;H01L29/20;H01L29/205 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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