发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
申请公布号 US2014138681(A1) 申请公布日期 2014.05.22
申请号 US201414164713 申请日期 2014.01.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO, LTD. 发明人 YAMAZAKI SHUNPEI;SAKATA JUNICHIRO;SAKAKURA MASAYUKI;OIKAWA YOSHIAKI;OKAZAKI KENICHI;MARUYAMA HOTAKA;TSUBUKU MASASHI
分类号 H01L27/12 主分类号 H01L27/12
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