Method for forming fin field effect transistor and/or MOSFET, involves forming indents in end of gate electrodes, where indents at bottom edge are formed along interface of gate electrodes and dielectric sheet

摘要

The method involves providing with a silicon substrate (110) with two fins that are laterally orientated, and forming a dielectric sheet (114) between ends of the fins. Gate electrodes are formed over the fins, and longitudinal axes of the electrodes are aligned with one another. An indent is formed in an end of the former electrode that is pointed to another gate electrode, and a second indent is formed in an end of another electrode, which points to the former gate electrode. The indents at the bottom edge are formed along an interface of the gate electrodes and dielectric sheet. An independent claim is also included for a fin field effect transistor.