发明名称 IMPROVED INTERCONNECTION METHOD FOR MICRO-IMAGING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an opto-microelectronic micro-imaging device.SOLUTION: There is provided a method for manufacturing an opto-microelectronic micro-imaging device that includes the steps of: forming a first functional part, based upon a semiconductor-on-insulator type first substrate, which includes a surface layer formed of a single-crystal semiconductor and a base layer arranged right below the surface layer and formed of an electric insulation material; transferring the first function part by forming an upper part plane of the first functional part integrated with a second substrate and positioned on one side face of the first functional part on the opposite side from the base layer; making thin the first substrate on one surface of the first substrate on the opposite side from the second substrate until the base layer is reached and maintaining at least a part of the thickness of the base layer; and forming, on the base layer, a second functional part having at least a second electric connection pad configured to include a pixel electrode and participate in an electric connection between the pixel electrode and a transistor electrode.</p>
申请公布号 JP2014096578(A) 申请公布日期 2014.05.22
申请号 JP20130211661 申请日期 2013.10.09
申请人 COMMISSARIAT A L&apos,ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 UMBERTO ROSSINI;THIERRY FLAHAUT
分类号 H01L21/768;G02F1/1368;H01L21/02;H01L21/3205;H01L21/336;H01L23/522;H01L27/12;H01L29/786 主分类号 H01L21/768
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