发明名称 |
IMPROVED INTERCONNECTION METHOD FOR MICRO-IMAGING DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing an opto-microelectronic micro-imaging device.SOLUTION: There is provided a method for manufacturing an opto-microelectronic micro-imaging device that includes the steps of: forming a first functional part, based upon a semiconductor-on-insulator type first substrate, which includes a surface layer formed of a single-crystal semiconductor and a base layer arranged right below the surface layer and formed of an electric insulation material; transferring the first function part by forming an upper part plane of the first functional part integrated with a second substrate and positioned on one side face of the first functional part on the opposite side from the base layer; making thin the first substrate on one surface of the first substrate on the opposite side from the second substrate until the base layer is reached and maintaining at least a part of the thickness of the base layer; and forming, on the base layer, a second functional part having at least a second electric connection pad configured to include a pixel electrode and participate in an electric connection between the pixel electrode and a transistor electrode.</p> |
申请公布号 |
JP2014096578(A) |
申请公布日期 |
2014.05.22 |
申请号 |
JP20130211661 |
申请日期 |
2013.10.09 |
申请人 |
COMMISSARIAT A L&apos,ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
UMBERTO ROSSINI;THIERRY FLAHAUT |
分类号 |
H01L21/768;G02F1/1368;H01L21/02;H01L21/3205;H01L21/336;H01L23/522;H01L27/12;H01L29/786 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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