| 摘要 |
Provided is a chip structure for a pressure sensor. A 110 crystal orientation silicon substrate is used as a silicon substrate (1) of the chip structure. A wet corrosion method is used to corrode a back cavity of the silicon substrate (1) to form a groove (5), so that good uniformity is provided in the silicon wafer, and the scratch on the surface of the silicon substrate (1) is small. According to crystal orientation characteristics of the 110 crystal orientation silicon substrate, the groove (5) formed by corrosion generally has a straight opening and a rectangular cross-section, and does not have a tilt angle after corrosion, so that the size at the opening is consistent with that at the bottom of the groove (5), and the problems such as increased chip area are avoided, thereby reducing the manufacturing cost. Also provided is a method for fabricating a chip structure for a pressure sensor. |
