| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultraviolet light-emitting element in which light extraction efficiency is improved, and deterioration of underfill agent can be suppressed when it is flip-chip mounted.SOLUTION: An ultraviolet light-emitting element includes a multilayer semiconductor layer having an n-type group III nitride semiconductor layer, a luminous layer, and a p-type group III nitride semiconductor layer, in which a translucent positive electrode is formed on the p-type group III nitride semiconductor layer, a negative electrode is formed on the n-type group III nitride semiconductor layer, and the emission wavelength is 300 nm or less. The ultraviolet light-emitting element further includes a translucent insulation layer formed on a surface including the side face of the multilayer semiconductor layer on the side where the positive and negative electrodes are formed, excepting the upper surface exposed part of the translucent positive electrode and the upper surface exposed part of the negative electrode, and a metallic reflective layer formed on the translucent insulation layer and the upper surface exposed part of the translucent positive electrode. |
