| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing fin structures comprising a strained Ge on a SiGe buffer for use as quantum well digital logic transistors.SOLUTION: A strained Ge portion is formed by oxidizing SiGe structures extending outwards from an insulating surface. The insulating surface is formed by a top surface of an STI oxide region produced in a Si substrate, preferably. The SiGe structures may be grown in the Si substrate by Aspect Ratio Trapping (ART), thereby obtaining a SiGe structure that is relaxed and essentially defect-free in a top region. The oxidation process results in a structure made of a Ge region and a SiOlayer covering the fins. The oxidation is continued until a pure strained Ge top portion is obtained on the SiGe base of the fins. The process can involve the oxidation of separate SiGe structures formed by overgrowth of SiGe into mushroom-shaped overgrowth portions. |
