CONTROLLED MANUFACTURING METHOD OF METAL OXIDE SEMICONDUCTOR AND METAL OXIDE SEMICONDUCTOR STRUCTURE HAVING CONTROLLED GROWTH CRYSTALLOGRAPHIC PLANE

摘要

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.