发明名称 |
NITRIDE SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SAME |
摘要 |
A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm−3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency. |
申请公布号 |
US2014138619(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201313963127 |
申请日期 |
2013.08.09 |
申请人 |
GENESIS PHOTONICS INC. |
发明人 |
LAI YEN-LIN;WU JYUN-DE;LI YU-CHU |
分类号 |
H01L33/06 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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