| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an etching method capable of increasing the selection ratio of etching of a processed material and a resist, and to provide a sapphire substrate processed by this etching method, and a light-emitting element including the sapphire substrate.SOLUTION: The etching method using a plasma etching device includes a resist film formation step for forming a resist film on a processed material, a patterning step for forming a predetermined pattern on the resist film, a resist transformation step for increasing the selection ratio of etching by exposing the patterned resist film to plasma under predetermined transformation conditions thereby transforming the resist film, and an etching step of the processed material for etching the processed material using the resist film having an increased selection ratio as a mask, by exposing the processed material to plasma under etching conditions different from the transformation conditions.</p> |
