发明名称 |
METHOD OF BONDING A SEMICONDUCTOR DEVICE TO A SUPPORT SUBSTRATE |
摘要 |
A method according to embodiments of the invention includes providing a wafer of semiconductor devices grown on a growth substrate. The wafer of semiconductor devices has a first surface and a second surface opposite the first surface. The second surface is a surface of the growth substrate. The method further includes bonding the first surface to a first wafer and bonding the second surface to a second wafer. In some embodiments, the first and second wafer each have a different coefficient of thermal expansion than the growth substrate. In some embodiments, the second wafer may compensate for stress introduced to the wafer of semiconductor devices by the first wafer. |
申请公布号 |
US2014141552(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201214131207 |
申请日期 |
2012.07.10 |
申请人 |
ZOU QUANBO;AKRAM SALMAN;BHAT JEROME CHANRA;KONINKLIJKE PHILIPS N.V. |
发明人 |
ZOU QUANBO;AKRAM SALMAN;BHAT JEROME CHANRA |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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