POWER MODULE AND METHOD OF MANUFACTURING POWER MODULE

摘要

PROBLEM TO BE SOLVED: To provide a power module excellent in bonding strength and bonding reliability in a cooling cycle between a semiconductor element and a circuit layer, and to provide a method of manufacturing the power module.SOLUTION: A power module 1 comprises: a substrate 10 for the power module in which a circuit layer 12 composed of copper or copper alloy is disposed on one surface of a ceramic substrate 11; and a semiconductor element 3 mounted above the circuit layer 12. The semiconductor element is bonded by an Ag sintered layer 31 formed on the circuit layer 12 and composed of a sintered body of Ag in which silver oxide is reduced. The Ag sintered layer 31 is directly bonded to the circuit layer, and its porosity ranges from 20% to 60%.