| 摘要 |
PROBLEM TO BE SOLVED: To secure the time required for a desired amplification factor or output, while ensuring a suitable S/N ratio, in a detector or a radiation detector having APS type pixels manufactured by a thin film semiconductor production technique.SOLUTION: In a detector having a plurality of pixels P arranged in matrix, and signal wiring 22 connected electrically with the pixels P on a substrate 10, the pixels P include a conversion element S for converting radiation or light into charges, a thin film transistor Tfor amplification outputting an electric signal dependent on the charges, a capacitive element Cfor holding an electric signal outputted by the thin film transistor Tfor amplification, and a thin film transistor Tfor transferring the electric signal held in the capacitive element Cto the signal wiring 22. |
