发明名称 |
PHOTOELECTRIC ELEMENT AND METHOD OF MANUFACTURING PHOTOELECTRIC ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photoelectric element that reduces recombination loss of carriers due to defects of a semiconductor substrate and improves an open-circuit voltage, and to provide a method of manufacturing the photoelectric element.SOLUTION: A photoelectric element includes: a semiconductor substrate composed of single crystal silicon and having a first surface and a second surface facing to each other; a doping portion formed on a first surface side of the semiconductor substrate; and a first insulating film formed between the doping portion and the second surface of the semiconductor substrate. The doping portion includes a first semiconductor layer containing a first dopant doped into the single crystal silicon and a second semiconductor layer containing a second dopant doped into the single crystal silicon.</p> |
申请公布号 |
JP2014096574(A) |
申请公布日期 |
2014.05.22 |
申请号 |
JP20130197748 |
申请日期 |
2013.09.25 |
申请人 |
SAMSUNG SDI CO LTD |
发明人 |
KANG YOON-MOOK;PARK SANG-JIN;LEE DOO-YOUL;KIM HYUNG GI;MO CHAN BIN;PARK YOUNG-SANG;SEO KYOUNG-JIN;KIM MIN-SUNG;HONG JUN-KI;LIM HEUNG-KYOON;SONG MIN-CHUL;PARK SUNG-CHAN;KIM DONG-SEOP |
分类号 |
H01L31/06 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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