发明名称 PHOTOELECTRIC ELEMENT AND METHOD OF MANUFACTURING PHOTOELECTRIC ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a photoelectric element that reduces recombination loss of carriers due to defects of a semiconductor substrate and improves an open-circuit voltage, and to provide a method of manufacturing the photoelectric element.SOLUTION: A photoelectric element includes: a semiconductor substrate composed of single crystal silicon and having a first surface and a second surface facing to each other; a doping portion formed on a first surface side of the semiconductor substrate; and a first insulating film formed between the doping portion and the second surface of the semiconductor substrate. The doping portion includes a first semiconductor layer containing a first dopant doped into the single crystal silicon and a second semiconductor layer containing a second dopant doped into the single crystal silicon.</p>
申请公布号 JP2014096574(A) 申请公布日期 2014.05.22
申请号 JP20130197748 申请日期 2013.09.25
申请人 SAMSUNG SDI CO LTD 发明人 KANG YOON-MOOK;PARK SANG-JIN;LEE DOO-YOUL;KIM HYUNG GI;MO CHAN BIN;PARK YOUNG-SANG;SEO KYOUNG-JIN;KIM MIN-SUNG;HONG JUN-KI;LIM HEUNG-KYOON;SONG MIN-CHUL;PARK SUNG-CHAN;KIM DONG-SEOP
分类号 H01L31/06 主分类号 H01L31/06
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