发明名称 TEST APPARATUS AND TEST METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a test apparatus and a test method which can significantly reduce testing time for a high voltage and heavy-current IGBT module and a power MOSFET module in comparison with the conventional art.SOLUTION: A semiconductor element module 4B comprises a plurality of series circuits each including a pair of semiconductor elements composed of high side semiconductor elements Q1-Q3 and low side semiconductor elements Q5-Q7. The test apparatus connects a high side connection line with a high voltage power supply 2A, and commonly supplies DC voltage to the high side semiconductor elements Q1-Q3 included in the plurality of series circuits from the high voltage power supply 2A. Connection points of the low side semiconductor elements Q5-Q7 respectively corresponding to the high side semiconductor elements Q1-Q3 are respectively connected to low voltage power supplies 2B2-2B4, to thereby detect current. This allows simultaneous testing of the high side semiconductor elements Q1-Q3 or the low side semiconductor elements Q5-Q7 included in the plurality of series circuits.</p>
申请公布号 JP2014095577(A) 申请公布日期 2014.05.22
申请号 JP20120246016 申请日期 2012.11.08
申请人 SHIBASOKU:KK 发明人 OKADA KATSUO;KIKUCHI MASATOSHI
分类号 G01R31/26;H01L21/822;H01L27/04;H02M7/48 主分类号 G01R31/26
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