SEMICONDUCTOR POWER MODULE, PRODUCTION METHOD OF SEMICONDUCTOR POWER MODULE AND CIRCUIT BOARD

摘要

A semiconductor power module (10) includes a ceramic multilayer substrate (100), a bonding layer (110), a diffusion layer (120) and a semiconductor device (130). The bonding layer is placed on a first surface (105) of the ceramic multilayer substrate and is provided as a planar thin film layer including conductive bonding parts (111) configured to electrically connect the semiconductor device with the ceramic multilayer substrate and insulating bonding parts (112) configured to isolate the semiconductor device from the ceramic multilayer substrate. Also disclosed is a production method of the semiconductor power module.