发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 First conductive layers extend in a first direction horizontal to a substrate as a longitudinal direction, and are stacked in a direction perpendicular to a substrate. An interlayer insulating layer is provided between the first conductive layers. The variable resistance layers functioning as a variable resistance element are formed continuously on the side surfaces of the first conductive layers and the interlayer insulating layer. A columnar conductive layer is provided on the side surfaces of the first conductive layers and the interlayer insulating layer via the variable resistance layers. First side surfaces of the first conductive layers are recessed from a second side surface of the interlayer insulating layer in the direction away from the columnar conductive layers.
申请公布号 US2014138597(A1) 申请公布日期 2014.05.22
申请号 US201313845935 申请日期 2013.03.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOJIRI YASUHIRO;FUKUMIZU HIROYUKI;KOBAYASHI SHIGEKI;YAMATO MASAKI
分类号 H01L45/00 主分类号 H01L45/00
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