SEMICONDUCTOR DEVICE HAVING DIFFUSION BARRIER TO REDUCE BACK CHANNEL LEAKAGE

摘要

A semiconductor-on-insulator (100) (SOI) substrate comprises a bulk semiconductor substrate (102), a buried insulator layer (106) formed on the bulk substrate (102) and an active semiconductor layer (104) formed on the buried insulator layer (106). Impurities (108) are implanted near the interface of the buried insulator layer (106) and the active semiconductor layer (104). A diffusion barrier layer (110) is formed between the impurities (108) and an upper surface of the active semiconductor layer (114). The diffusion barrier layer (110) prevents the impurities (108) from diffusing therethrough.